Structural and optical properties of In(Ga)As/GaAs quantum dots treated by partial capping and annealing

Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

  Wang, L ^a   Rastelli, A ^a   Schmidt, O G ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MONOLAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EMISSION ENERGY; IN SITU SELECTIVE ETCHING; PARTIAL CAPPING; SUBSTRATE TEMPERATURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33749331020     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2349432     Document Type: Article

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