Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules

Applied Physics Letters

Volumn 89, Issue 23, 2006, Pages

  Bracker, A S ^a   Scheibner, M ^a   Doty, M F ^a   Stinaff, E A ^a   Ponomarev, I V ^a   Kim, J C ^a   Whitman, L J ^a   Reinecke, T L ^a   Gammon, D ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRON TUNNELING; ELECTRONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

GROWTH FLUCTUATIONS; HOLE TUNNELING; INTERDOT BARRIER THICKNESS; QUANTUM DOT NANOSTRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33845383435     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2400397     Document Type: Article

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