Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 9, Issue 1, 2001, Pages 84-93

  Heinzel, T ^a   Held, R ^a   Luscher S ^a   Ensslin, K ^a   Wegscheider, W ^b,c   Bichler, M ^c  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRONIC PROPERTIES; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES;

GALLIUM ALUMINUM ARSENIDE; SCANNING PROBE LITHOGRAPHY;

HETEROJUNCTIONS;

EID: 0035147804     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00181-8     Document Type: Article

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