Highly ordered arrays of In(Ga)As quantum dots on patterned GaAs (0 0 1) substrates

Journal of Crystal Growth

Volumn 261, Issue 4, 2004, Pages 444-449

  Heidemeyer, H ^a   Muller C ^a   Schmidt, O G ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

A1. Nanostructures; A1. Patterned substrate; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

PATTERNED SUBSTRATES; STRAIN ENERGY DENSITY DISTRIBUTION;

SEMICONDUCTOR GROWTH;

EID: 0348229317     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.030     Document Type: Article

References (23)

1. Bimberg D., Grundmann M., Ledentsov N.N. Quantum dot heterostructures. 1998;Wiley, New York.
2. Petroff P.M., Lorke A., Imamoglu A. Phys. Today. 54:2001;46.
3. Shchukin V.A., Ledentsov N.N., Bimberg D. Epitaxy of Nanostructures. 2003;Springer, New York.
4. Park G., Shckekin O.B., Huffacker D.L., Deppe D.G. IEEE Photon. Tech. Lett. 12:2000;230.
5. Michler P., Kiraz A., Becher C., Schoenfeld W.V., Petroff P., Zhang Lidong, Hu E., Imamoǧlu A. Science. 290:2000;2282.
6. Yuan Z., Kardynal B.E., Stevenson R.M., Shields A.J., Lobo C.J., Cooper K., Beattie N.S., Ritchie D.A., Pepper M. Science. 295:2002;102.
7. Zrenner A., Beham E., Stufler S., Findeis F., Bichler M., Abstreiter G. Nature. 418:2002;612.
8. Jin G., Liu J.L., Wang K.L. Appl. Phys. Lett. 76(24):2000;3591.
9. Lee H., Johnson J.A., Speck J.S., Petroff P.M. J. Vac. Sci. Technol. B. 18(4):2000;2193.
10. Nakamura Y., Schmidt O.G., Jin-Phillipp N.Y., Kiravittaya S., Müller C., Eberl K., Gräbeldinger H., Schweizer H. J. Crystal Growth. 242(3-4):2002;339.
11. Schmidt O.G., Kiravittaya S., Nakamura Y., Heidemeyer H., Songmuang R., Müller C., Jin-Phillipp N.Y., Eberl K., Wawra H., Christiansen S., Gräbeldinger H., Schweizer H. Surf. Sci. 514(10):2002;10.
12. Ishikawa T., Nishimura T., Kohmoto S., Asakawa K. Appl. Phys. Lett. 76(2):2000;167.
13. Hey R., Wassermeier M., Höricke M., Wiebicke E., Kostial H. J. Crystal Growth. 201/202:1999;582.
14. Takebe T., Fujii M., Yamamoto T., Fujiita K., Watanabe T. J. Vac. Sci. Technol. B. 14(4):1996;2731.
15. Schmidt O.G., Deneke C., Kiravittaya S., Songmuang R., Heidemeyer H., Nakamura Y., Zapf-Gottwick R., Müller C., Jin-Phillipp N.Y. IEEE J. Sel. Top. Quantum Electron. 8(5):2002;1025.
16. Kohmoto S., Nakamura H., Ishikawa T., Nishikawa S., Nishimura T., Asakawa K. Mater. Sci. Eng. B. 88:2002;292.
17. Schmidt O.G., Jin-Phillipp N.Y., Lange C., Denker U., Eberl K., Schreiner R., Gräbeldinger H., Schweizer H. Appl. Phys. Lett. 77(25):2000;4139.
18. Yang T., Kohmoto S., Nakamura H., Asakawa K. J. Appl. Phys. 93(2):2003;1191.
19. Heidemeyer H., Denker U., Müller C., Schmidt O.G. Phys. Rev. Lett. 91(19):2003;196103.
20. Songmuang R., Kiravittaya S., Schmidt O.G. J. Crystal Growth. 249:2003;416.
21. Heidemeyer H., Kiravittaya S., Müller C., Jin-Phillipp N.Y., Schmidt O.G. Appl. Phys. Lett. 80(9):2002;1544.
22. Faux D.A., Pearson G.S. Phys. Rev. B. 65(8):2000;4798.
23. Liu F., Davenport S.E., Evans H.M., Lagally M.G. Phys. Rev. Lett. 82(12):1999;2528.