Self-assembly of laterally aligned GaAs quantum dot pairs

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  Yamagiwa, M ^a   Mano, T ^a   Kuroda, T ^a,c   Tateno, T ^a   Sakoda, K ^a   Kido, G ^a   Koguchi, N ^a   Minami, F ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

ELEMENT ENERGY LEVEL; PHOTOLUMINESCENCE SPECTRA; SURFACE POTENTIALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748766378     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2354007     Document Type: Article

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