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Volumn 86, Issue 11, 2005, Pages 1-3
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Evolution of elongated (In,Ga)As-GaAs(100) islands with low indium content
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Author keywords
[No Author keywords available]
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Indexed keywords
ELASTIC STRAIN RELAXATION;
INDIUM CONTENT;
MONOLAYERS (ML);
ULTRAHIGH VACUUM (UHV);
ELASTIC MODULI;
HIGH ENERGY ELECTRON DIFFRACTION;
MOLECULAR BEAM EPITAXY;
NUCLEATION;
RELAXATION PROCESSES;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
SHRINKAGE;
STRAIN;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
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EID: 17944366370
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1883709 Document Type: Article |
Times cited : (20)
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References (17)
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