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Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1898-1903

Ordering and self-organized growth of Si in the Si/SiO2 superlattice system

(4) Lockwood, David J a Grom, G F b Fauchet, P M b Tsybeskov, L b

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

b University of Rochester (United States)

Author keywords

A1. Crystal morphology; A1. Nanostructures; A1. Recrystallization A3. Superlattices; B2. Semiconducting silicon

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CRYSTALLIZATION; HIGH TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR SUPERLATTICES; SILICA;

QUANTUM DEVICES;

CRYSTAL GROWTH;

EID: 0036530434 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02213-8 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.