Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization

Physica Status Solidi (A) Applied Research

Volumn 165, Issue 1, 1998, Pages 69-77

  Tsybeskov, L ^a   Hirschman, K D ^a   Duttagupta, S P ^a   Fauchet, P M ^a   Zacharias, M ^b   Mccaffrey, J P ^c   Lockwood, D J ^c  

^a University of Rochester ^*  (United States)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; HIGH TEMPERATURE OPERATIONS; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; RAMAN SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

CONTROLLED THERMAL RECRYSTALLIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTOR SUPERLATTICES;

EID: 0031648831     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199801)165:1<69::AID-PSSA69>3.0.CO;2-H     Document Type: Article

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