Nano-processing techniques applied in GaN-based light-emitting devices with self-assembly Ni nano-masks

Journal of Lightwave Technology

Volumn 26, Issue 11, 2008, Pages 1445-1454

  Chiu, Ching Hua ^a   Lo, Ming Hua ^a   Lu, Tien Chang ^a   Yu, Peichen ^a   Huang, H W ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; Light emitting diodes (LEDs); Nano masks; Nanorods

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; ETCHING; EXCIMER LASERS; GALLIUM NITRIDE; GAS LASERS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; NANORODS; NANOSTRUCTURES; NICKEL; NICKEL ALLOYS; OPTICAL DESIGN; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTONICS; PLASMA ETCHING; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SELF ASSEMBLY; SEMICONDUCTING GALLIUM; STRUCTURAL PROPERTIES;

(1 1 0) SURFACE; (2+1) DIMENSIONS; (E ,3E) PROCESS; APPLIED (CO); AS-GROWN; AS-GROWN SAMPLE; ELECTROLUMINESCENCE (EL); EXCIMER; FABRICATED DEVICES; GAN BASED LED; GAN BASED LIGHT EMITTING DIODES; GAN NANORODS; ICP-RIE; LASER ETCHING; LIGHT OUTPUT; LIGHT OUTPUT POWER; LIGHT-EMITTING DEVICES (LED); NANO RODS; NANO-PROCESSING; NANOSCALE MASKS; OPTICAL AND ELECTRICAL PROPERTIES; PHOTOLUMINESCENCE (PL) INTENSITY; PHYSICAL FEATURES; RAPID THERMAL ANNEALING (RTA); SELF-ASSEMBLY; SIMPLE METHODS; STRUCTURE PROPERTIES; WET OXIDATION PROCESS;

GALLIUM ALLOYS;

EID: 46349093516     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.922157     Document Type: Article

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