Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

IEEE Photonics Technology Letters

Volumn 17, Issue 10, 2005, Pages 2038-2040

  Lin, Chia Feng ^a   Yang, Zhong Jie ^a   Zheng, Jing Hui ^a   Dai, Jing Jie ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

GaN; Light extration efficiency; Light emitting diode (LED); Microroughening sidewall

Indexed keywords

ETCHING; GALLIUM NITRIDE; OPTICAL PROPERTIES; OXIDATION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS;

LIGHT EXTRACTION EFFICIENCY; MESA SIDEWALL; MICROROUGHENING SIDEWALL;

LIGHT EMITTING DIODES;

EID: 26844474296     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.854347     Document Type: Article

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