MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2253-2256

  Chang, S J ^a   Su, Y K ^a   Lin, Y C ^a   Chuang, R W ^a   Chang, C S ^a   Sheu, J K ^b   Wen, T C ^b   Shei, S C ^c   Kuo, C W ^d   Fang, D H ^e  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c South Epitaxy Corporation   (Taiwan)

^d KUN SHAN UNIVERSITY   (Taiwan)

^e SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LIGHT EMITTING DIODES; INGAN/GAN; MOCVD GROWTH; PATTERNED SAPPHIRE SUBSTRATE; PATTERNED SUBSTRATES; SAPPHIRE SUBSTRATES;

ATOMIC FORCE MICROSCOPY; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; NITRIDES; SAPPHIRE; SURFACE ROUGHNESS;

SUBSTRATES;

EID: 20044381725     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303355     Document Type: Conference Paper

References (6)

1. T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai C. H. Kuo, C. H. Chen, J. K. Sheu, and J. F. Chen, IEEE Trans. Electron. Devices 49, No. 6, 1093 (2002).
2. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, IEEE J. Quantum Electron. Lett. 38, No. 5, 446 (2002).
3. C. H. Kuo, S. J. Chang, Y. K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H. Chen, and G. C. Chi, IEEE Electron. Device Lett. 23, No. 5, 240 (2002).
4. C. H. Ko, Y K. Su, S. J. Chang, T. M. Kuan, C. I. Chiang, W. H. Lan, W. J. Lin, and J. Webb, Jpn. J. Appl. Phys. 41, No. 4B, 2489 (2002).
5. K. Tadatomo, H. Okagawa, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi, phys. stat. sol. (a) 188, No. 1, 121 (2001).
6. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, IEEE J. Sel. Top. Quantum Electron. 8, No. 2, 278 (2002).