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Thin Solid Films

Volumn 392, Issue 1, 2001, Pages 98-106

Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: Specific features of plastic relaxation

(6) Bolkhovityanov, Yu B a Gutakovskii, A K a Mashanov, V I a Pchelyakov, O P a Revenko, M A a Sokolov, L V a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

Low temperature growth; MBE; Misfit dislocation nucleation; Relaxed GeSi Si

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); FILM GROWTH; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NUCLEATION; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SOLID SOLUTIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MISFIT DISLOCATION NUCLEATION; PLASTIC RELAXATION;

SEMICONDUCTING FILMS;

EID: 0035939510 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01006-9 Document Type: Article

Times cited : (20)

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