Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

Superlattices and Microstructures

Volumn 44, Issue 1, 2008, Pages 37-53

  Kumar, Sona P ^a   Agrawal, Anju ^b   Chaujar, Rishu ^a   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Carrier transport efficiency; Dual material gate (DMG); Short channel effects (SCEs); Two dimensional (2 D) modeling; Work function

Indexed keywords

CARRIER TRANSPORT; CHANNEL ESTIMATION; COMPUTER SIMULATION; MATHEMATICAL MODELS;

DUAL MATERIAL GATE (DMG); SHORT CHANNEL EFFECTS (SCE); TWO-DIMENSIONAL (2-D) MODELING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 44949255328     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.01.023     Document Type: Article

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