Novel hetero-material gate (HMG) MOSFET for deep-submicron ULSI technology

IEEE Transactions on Electron Devices

Volumn 45, Issue 12, 1998, Pages 2546-2548

  Zhou, X ^a   Long, W ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE; ULSI CIRCUITS;

DEEP-SUBMICRON TECHNOLOGY; HETEROMATERIAL GATE MOSFET DEVICES;

MOSFET DEVICES;

EID: 0032314807     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.735743     Document Type: Article

References (7)