Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation

Microelectronics Journal

Volumn 38, Issue 10-11, 2007, Pages 1013-1020

  Kumar, Sona P ^a   Agrawal, Anju ^b   Chaujar, Rishu ^a   Kabra, Sneha ^a   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

AlGaN GaN HEMT; Short channel effects; Small geometry; Three dimensional (3 D) modeling; Threshold voltage

Indexed keywords

ELECTRIC FIELDS; ELECTRON MOBILITY; GALLIUM NITRIDE; THREE DIMENSIONAL; THRESHOLD VOLTAGE;

ANALYTICAL MODEL; BARRIER LAYER; ELECTRIC FIELD DISTRIBUTION; SHORT CHANNEL EFFECTS (SCE); SMALL GEOMETRY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 35848940064     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.09.001     Document Type: Article

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