An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications

Microelectronics Journal

Volumn 37, Issue 11, 2006, Pages 1339-1346

  Kumar, Sona P ^a   Agrawal, Anju ^b   Kabra, Sneha ^a   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

AlGaN GaN MODFET; Cutoff frequency; Heterostructure; Velocity field relationship

Indexed keywords

GALLIUM NITRIDE; MICROWAVES; PIEZOELECTRIC MATERIALS; POLARIZATION; TRANSCONDUCTANCE; VELOCITY MEASUREMENT;

CUTOFF FREQUENCIES; PIEZOELECTRIC POLARIZATION; VELOCITY FIELD RELATIONSHIPS; VELOCITY-FIELD DEPENDENCY;

FIELD EFFECT TRANSISTORS;

EID: 33750606236     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.07.003     Document Type: Article

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