An analytical 2D model for drain-induced barrier lowering in subquarter micrometer gate length InAlAs/InGaAs/InAlAs/InP LMHEMT

Microelectronics Journal

Volumn 33, Issue 8, 2002, Pages 633-638

  Jogi, Jyotika ^a,b   Sen, Sujata ^a,b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Channel potential; Drain induced barrier lowering; Field distribution; LMHEMT; Threshold voltage

Indexed keywords

BOUNDARY CONDITIONS; ELECTRON GAS; FERMI LEVEL; INTERFACES (MATERIALS); PERMITTIVITY; POISSON EQUATION; SEMICONDUCTING INDIUM COMPOUNDS; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

CHANNEL POTENTIAL; DRAIN INDUCED BARRIER LOWERING (DIBL); FIELD DISTRIBUTIONS; LMHEMT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1642280441     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(02)00033-2     Document Type: Article

References (15)

1. Mishra U.K., Brown A.S., Jelloion L.M., Thompson M., Nguyen L.D., Rosenbaum S.E. Novel high performance self-aligned 0.15 μm long T-gate AlInAs/GaInAs HEMT's. IEEE IEDM Tech. Dig. 1989;101-104.
2. Ho P., Kao M.Y., Chao P.C., Duh K.H.G., Ballingall J.M., Allen S.T., Tessmer A.J., Smith P.M. Extremely high gain 0.15 μm gate length InAlAs/InGaAs/InP HEMT's. Electron. Lett. 27:(4):1991;325-327.
3. Streif D.C., Tan K.L., Liu P.H., Chow P.D. High gain W-band InGaAS-InAlAs-InP HEMT's for low noise application. Proc. IEEE/Cornel Conf. Adv. Conc. High-speed Semicond. Device Circuits. August:1991;455-460.
4. Jogi J., Sen S., Gupta M., Gupta R.S. Carrier concentration dependent low field mobility model for InAlAs/InGaAs/InP lattice matched HEMT for microwave application. Microwave Optical Technol. Lett. April:2001;66-70.
5. Jogi J., Sen S., Gupta M., Gupta R.S. A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency. Microelectron. J. December:2001;925-930.
6. Gupta R., Kranti A., Haldar S., Gupta M., Gupta R.S. An analytical non-linear charge control parasitic resistance dependent model for InAlAs/InGaAs/InP HEMT characteristics. Microelectronic Engineering. 60:(3-4):2002;323-337.
7. Welch D.F., Wicks G.W., Eastman L.F. Calculation of the conduction band discontinuity for InAlAs/InGaAs heterojunction. J. Appl. Phys. 58:(8):1984;3176-3179.
8. Sen S., Pandey M.K., Gupta R.S. Two-dimensional C-V model of AlGaAs/GaAs modulation doped field effect transistor (MODFET) for high frequency application. IEEE Trans. Electron Devices. ED-46:(9):1999;1818-1823.
9. Drummond T.J., Morkoc H., Lee K., Shur M. Model for modulation-doped field effect transistors. IEEE Electron Device Lett. 3:(November):1982;338-341.
10. Chen J.-W., Thurairaj M., Das M.B. Optimization of gate-to-drain separation in gate-length modulation doped FET's for maximum power gain performance. IEEE Trans. Electron Devices. 41:(4):1994;465-475.
11. Young K.K. Short-channel effect in fully depleted SOI MOSFET's. IEEE Trans. Electron Devices. 36:(2):1989;399-402.
12. Marshall J.D., Meindl J.D. An analytical two-dimensional model for silicon MESFET's. IEEE Trans. Electron Devices. 35:(3):1988;373-383.
13. Chang C.T.M., Vrotsos T., Frizzell M.T., Carroll R. A subthreshold current model for GaAs MESFET's. IEEE Electron Devices Lett. 8:(2):1987;69-72.
14. Pone J.F., Castagne R.C., Courat J.P., Arnodo C. Two-dimensional particle modeling of submicrometer gate GaAs FET's near pinch off. IEEE Trans. Electron Devices. 29:1982;1244-1255.
15. Chang C.S., Fetterman H.R. An analytical model for HEMT's using new velocity-field dependence. IEEE Trans. Electron Devices. 34:1987;1456-1462.