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Volumn 44, Issue 9, 2000, Pages 1707-1710

Analytic modeling of the subthreshold behavior in MOSFET

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

EID: 0034273133     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00116-7     Document Type: Article
Times cited : (6)

References (13)
  • 4
    • 0027698768 scopus 로고
    • Switched-source-impedance CMOS circuit for low standby subthreshold current giga-scale LSI's
    • Horiguchi M., Sakata T., Itoh K. Switched-source-impedance CMOS circuit for low standby subthreshold current giga-scale LSI's. IEEE J Solid-State Circuits. 28(11):1993;1131.
    • (1993) IEEE J Solid-State Circuits , vol.28 , Issue.11 , pp. 1131
    • Horiguchi, M.1    Sakata, T.2    Itoh, K.3
  • 8
    • 0016509127 scopus 로고
    • Theory of MOS transistor in weak inversion-new method to determine the number of surface states
    • Van Overstraeten R.J., Declerck G.J., Muls P.A. Theory of MOS transistor in weak inversion-new method to determine the number of surface states. IEEE Trans Electron Dev. 22:1975;282.
    • (1975) IEEE Trans Electron Dev , vol.22 , pp. 282
    • Van Overstraeten, R.J.1    Declerck, G.J.2    Muls, P.A.3
  • 9
    • 0018517266 scopus 로고
    • Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFET
    • Brews J.R. Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFET. IEEE Trans Electron Dev. 26(9):1979;1282.
    • (1979) IEEE Trans Electron Dev , vol.26 , Issue.9 , pp. 1282
    • Brews, J.R.1
  • 11
    • 0015330654 scopus 로고
    • Ion-implanted complementary MOS transistors in low-voltage circuits
    • Swanson R.M., Meindl J.D. Ion-implanted complementary MOS transistors in low-voltage circuits. IEEE J Solid-State Circuits. 7(2):1972;146.
    • (1972) IEEE J Solid-State Circuits , vol.7 , Issue.2 , pp. 146
    • Swanson, R.M.1    Meindl, J.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.