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Volumn , Issue , 2006, Pages 28-33

CNTFET basics and simulation

Author keywords

[No Author keywords available]

Indexed keywords

NANOTECHNOLOGY;

EID: 44949143941     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/dtis.2006.1708731     Document Type: Conference Paper
Times cited : (53)

References (14)
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  • 2
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    • Semi-empirical SPICE models for Carbon nanotube FET logic
    • C. Dwyer, M. Cheung, D. J. Sorin, "Semi-empirical SPICE models for Carbon nanotube FET logic", 4th IEEE Conf. on Nanotech., pp. 386-388, 2004.
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    • Dwyer, C.1    Cheung, M.2    Sorin, D.J.3
  • 3
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    • A circuit-compatible model of ballistic carbon nanotube field-effect transistors
    • A. Raychowdhury et al., "A Circuit-Compatible Model of Ballistic Carbon Nanotube Field-Effect Transistors", IEEE trans. on computer-aided design of integrated circuits and systems, Vol. 23, No. 10, pp. 1411-1420, 2004.
    • (2004) IEEE Trans. on Computer-aided Design of Integrated Circuits and Systems , vol.23 , Issue.10 , pp. 1411-1420
    • Raychowdhury, A.1
  • 4
    • 0036927921 scopus 로고    scopus 로고
    • Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors
    • J. Guo, S. Datta, M. Lundstrom, "Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors", IEDM, pp. 711-715, 2002.
    • (2002) IEDM , pp. 711-715
    • Guo, J.1    Datta, S.2    Lundstrom, M.3
  • 5
    • 26644474574 scopus 로고    scopus 로고
    • High-performance carbon nanotube field- effect transistor with tunable polarities
    • Y.-M. Lin et al., "High-Performance Carbon Nanotube Field- Effect Transistor With Tunable Polarities", IEEE Trans. on Nanotech, Vol. 4, No. 5, pp. 481-489, 2005.
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    • Lin, Y.-M.1
  • 6
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    • High performance n-type carbon nanotube field-effect transistors with chemically doped contacts
    • A. Javey et al., "High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts", Nano letters, Vol. 5, No. 2, pp. 345-348, 2005.
    • (2005) Nano Letters , vol.5 , Issue.2 , pp. 345-348
    • Javey, A.1
  • 7
    • 29244461475 scopus 로고    scopus 로고
    • Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design
    • J. Appenzeller et al., "Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design", IEEE Trans. on Electron Devices, Vol. 52, No. 12, pp. 2568-2576, 2005.
    • (2005) IEEE Trans. on Electron Devices , vol.52 , Issue.12 , pp. 2568-2576
    • Appenzeller, J.1
  • 8
    • 79956022434 scopus 로고    scopus 로고
    • Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
    • S.J. Wind et al., "Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes", App. Phys. Lett., Vol. 80, No. 20, pp. 3817-3819, 2002.
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    • Wind, S.J.1
  • 9
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    • Carbon nanotubes for microelectronics: Status and future prospects
    • W. Hoenlein et al., "Carbon nanotubes for microelectronics: status and future prospects", Materials Science and Engineering C23, pp. 663-669, 2003.
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    • Hoenlein, W.1
  • 10
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    • Ballistic metal-oxide-semiconductor field effect transistor
    • K. Natori, "Ballistic metal-oxide-semiconductor field effect transistor", Appl. Phys., 76, 4879 (1994).
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  • 11
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    • Theory of ballistic nano-transistors
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  • 12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.