A circuit-compatible model of ballistic carbon nanotube field-effect transistors

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 23, Issue 10, 2004, Pages 1411-1420

  Raychowdhury, Arijit ^a   Mukhopadhyay, Saibal ^a   Roy, Kaushik ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Ballistic scaling; Carbon nanotube (CNT); Circuit compatible model

Indexed keywords

BALLISTICS; CARBON NANOTUBES; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; ELECTROLYTES; GRAPHITE; MOSFET DEVICES; VOLTAGE CONTROL;

BALLISTIC SCALING; CIRCUIT SIMULATIONS; CIRCUIT-COMPATIBLE MODEL;

FIELD EFFECT TRANSISTORS;

EID: 5444266124     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2004.835135     Document Type: Article

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