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Volumn , Issue , 2006, Pages 34-39

Design-oriented compact models for CNTFETs

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; SCHOTTKY BARRIER DIODES;

EID: 52949150711     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/dtis.2006.1708732     Document Type: Conference Paper
Times cited : (47)

References (11)
  • 1
    • 33646900503 scopus 로고    scopus 로고
    • Device scaling limits of Si MOSFETs and their application dependencies
    • D. Frank, R. Dennard, E. Nowak, P. Solomon, Y. Taur, and H-S.P. Wong, "Device scaling limits of Si MOSFETs and their application dependencies," Proc. of IEEE, vol. 89, no. 3, pp. 259-288, 2001.
    • (2001) Proc. of IEEE , vol.89 , Issue.3 , pp. 259-288
    • Frank, D.1    Dennard, R.2    Nowak, E.3    Solomon, P.4    Taur, Y.5    Wong, H.-S.P.6
  • 4
    • 5444266124 scopus 로고    scopus 로고
    • A circuit-compatible model of ballistic carbon nanotube field-effect transistors
    • A. Raychowdhury, S. Mukhopadhyay, and K. Roy, "A circuit-compatible model of ballistic carbon nanotube field-effect transistors," IEEE Trans. Computer-Aided Design, vol. 12, no. 10, pp. 1411-1420, 2004.
    • (2004) IEEE Trans. Computer-Aided Design , vol.12 , Issue.10 , pp. 1411-1420
    • Raychowdhury, A.1    Mukhopadhyay, S.2    Roy, K.3
  • 5
    • 0029342165 scopus 로고
    • An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
    • C. Enz, F. Krummenacher, and E. Vittoz, "An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications," Journal of AICSP, pp. 83-114, 1995.
    • (1995) Journal of AICSP , pp. 83-114
    • Enz, C.1    Krummenacher, F.2    Vittoz, E.3
  • 7
    • 79955987859 scopus 로고    scopus 로고
    • Performance projections for ballistic carbon nanotube field-effect transistors
    • J. Guo, M. Lundstrom, and S. Datta, "Performance projections for ballistic carbon nanotube field-effect transistors," App. Phys. Letters, vol. 80, no. 17, pp. 3192-3194, 2002.
    • (2002) App. Phys. Letters , vol.80 , Issue.17 , pp. 3192-3194
    • Guo, J.1    Lundstrom, M.2    Datta, S.3
  • 8
    • 15944374738 scopus 로고    scopus 로고
    • Carbon-nanotube-based voltage-mode multiple-valued logic design
    • A. Raychowdhury and K. Roy, "Carbon-nanotube-based voltage-mode multiple-valued logic design," IEEE Trans. Nanotechno., vol. 4, no. 2, pp. 168-179, 2005.
    • (2005) IEEE Trans. Nanotechno. , vol.4 , Issue.2 , pp. 168-179
    • Raychowdhury, A.1    Roy, K.2
  • 9
    • 9544252190 scopus 로고    scopus 로고
    • Comparison of transport propoerties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
    • J. Knoch, S. Mantl, and J. Appenzeller, "Comparison of transport propoerties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts," Solid-State Electron., vol. 49, pp. 73-76, 2005.
    • (2005) Solid-State Electron. , vol.49 , pp. 73-76
    • Knoch, J.1    Mantl, S.2    Appenzeller, J.3
  • 10
    • 0442311241 scopus 로고    scopus 로고
    • A numerical study of scaling issues for schottky-barrier carbon nanotube transistors
    • J. Guo, S. Datta, and M. Lundstrom, "A numerical study of scaling issues for schottky-barrier carbon nanotube transistors," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 172-177, 2004.
    • (2004) IEEE Trans. Electron Devices , vol.51 , Issue.2 , pp. 172-177
    • Guo, J.1    Datta, S.2    Lundstrom, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.