Analysis of CNTFET physical compact model

Proceedings - 2006 International Conference on Design and Test of Integrated Systems in Nanoscale Technology, IEEE DTIS 2006

Volumn , Issue , 2006, Pages 40-45

  Maneux, C ^a   Goguet, J ^a   Fregonese S ^a   Zimmer, T ^a   Cazin d'Honincthun, H ^b   Galdin Retailleau, S ^b  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Ballistic 1 D theory; Carbon nanotubes FET (CNTFET); Compact modeling

Indexed keywords

CARBON NANOTUBES; MOSFET DEVICES;

CIRCUIT DESIGNERS; COMPACT MODEL; COMPLEX CIRCUITS; DC CHARACTERISTICS; DOPING PROFILES; ENERGY CONDUCTION; HELICITIES; NMOSFET;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

EID: 52949135459     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/dtis.2006.1708733     Document Type: Conference Paper

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