High-speed source-heterojunction-MOS-transistor (SHOT) utilizing high-velocity electron injection

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2690-2696

  Mizuno, Tomohisa ^a,b   Sugiyama, Naoharu ^c,d   Tezuka, Tsutomu ^c,d   Moriyama, Yoshihiko ^c,d   Nakaharai, Shu ^c,d   Maeda, Tatsuro ^a   Takagi, Shin ichi ^a,e  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b KANAGAWA UNIVERSITY   (Japan)

^c M1RAI ASET   (Japan)

^d TOSHIBA CORPORATION   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

Ballistic transport; Band offset; Heterojunction; High velocity electron injection; Source engineering

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STRAIN; TRANSCONDUCTANCE;

BALLISTIC TRANSPORT; BAND-OFFSET; HIGH-VELOCITY ELECTRON INJECTION; SOURCE ENGINEERING; SOURCE-HETEROJUNCTION-MOS-TRANSISTOR (SHOT); TRANSCONDUCTANCE ENHANCEMENT;

MOSFET DEVICES;

EID: 29244472075     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859591     Document Type: Article

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