Fabrication of high Ge content SiGe layer on Si by Ge condensation technique

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2006, Pages 301-305

  Balakumar, S ^a   Jun Wei, T ^a,b   Tung, C H ^a   Lo, G Q ^a   Nguyen, H S ^a   Fong, C S ^a   Agarwal, A ^a   Kumar, R ^a   Balasubramanian, N ^a   Lee, S J ^b   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34250637204     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2006.251050     Document Type: Conference Paper

References (13)

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