High velocity electron injection MOSFETs for ballistic transistors using SiGe/strained-Si heterojunction source structures

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 202-203

  Mizuno, T ^a   Sugiyama, N ^a   Tezuka, T ^a   Moriyama, Y ^a   Nakaharai, S ^a   Maeda, T ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CHARGE CARRIERS; DIFFUSION; FERMI LEVEL; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; KINETIC ENERGY; SEMICONDUCTING GERMANIUM; SILICON COMPOUNDS; THICKNESS CONTROL; VELOCITY CONTROL;

BALLISTIC TRANSISTORS; ELECTRON INJECTION; VELOCITY CARRIERS; WIDE-GAP EMITTER;

HETEROJUNCTIONS;

EID: 4544385362     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345479     Document Type: Conference Paper

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