Characterization of non-equilibrium charge of MOS capacitors on p-type 4H SiC

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1365-1368

  Cheong, K Y ^a,b   Dimitrijev, S ^a   Han, J ^a  

^a GRIFFITH UNIVERSITY   (Australia)

^b SCHOOL OF CHEMICAL ENGINEERING   (Malaysia)

Author keywords

Capacitance transient; Effective generation rate; Minority carrier lifetime; Nitrided gate oxide; Nonvolatile memory; Surface generation velocity

Indexed keywords

CAPACITANCE; CONCENTRATION (PROCESS); ELECTRONS; OXIDATION; OXIDES; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THRESHOLD VOLTAGE;

CAPACITANCE-TRANSIENT; EFFECTIVE GENERATION RATE; MINORITY-CARRIER LIFETIME; NITRIDED GATE OXIDE; NONVOLATILE MEMORY; SURFACE-GENERATION VELOCITY;

MOS CAPACITORS;

EID: 4444291400     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1365     Document Type: Conference Paper

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