SCOPUS 정보 검색 플랫폼

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 8-9, 2008, Pages 821-827

Latest developments in GaN-based quantum devices for infrared optoelectronics

(10) Monroy, Eva a Guillot, Fabien a Leconte, Sylvain a Nevou, Laurent b Doyennette, Laetitia b Tchernycheva, Maria b Julien, Francois H b Baumann, Esther c Giorgetta, Fabrizio R c Hofstetter, Daniel c

a CEA GRENOBLE (France)

b UNIVERSITÉ PARIS SACLAY (France)

c UNIVERSITY OF NEUCHÂTEL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ELECTRO-OPTICAL MODULATORS; NITRIDE-BASED INFRARED PHOTODETECTORS; PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 44149126181 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-007-9482-3 Document Type: Conference Paper

Times cited : (17)

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