Relationship between carrier dynamics and temperature in terahertz quantum cascade structures: Simulation of GaAs/AlGaAs, SiGe/Si and GaN/AlGaN devices

Semiconductor Science and Technology

Volumn 20, Issue 7, 2005, Pages

  Indjin, D ^a   Ikonic Z ^a   Jovanovic V D ^a   Vukmirovic N ^a   Harrison, P ^a   Kelsall, R W ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; LIGHT SCATTERING; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS;

ENERGY-BALANCE SIMULATIONS; PHONON SCATTERING; ROUGHNESS SCATTERING; SCATTERING RATES;

QUANTUM WELL LASERS;

EID: 21344439057     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/7/014     Document Type: Article

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