메뉴 건너뛰기




Volumn 254, Issue 17, 2008, Pages 5487-5491

Gadolinium oxide high-k gate dielectrics prepared by anodic oxidation

Author keywords

Anodic oxidation; Dielectric constant; Equivalent oxide thickness; Gadolinium oxide

Indexed keywords

ANODIC OXIDATION; FILM THICKNESS; GADOLINIUM COMPOUNDS; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; THIN FILMS;

EID: 43849102708     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.115     Document Type: Article
Times cited : (12)

References (15)
  • 5
    • 85120264270 scopus 로고    scopus 로고
    • H. F. Luan, B. Z. Wu, L. G. Kang, B. Y. Kim, R. Vrtis, D. Robert, D. L. Kwong, IEDM’98 Tech. Dig., San Francisco, CA, 1998, pp. 609–612.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.