Interfacial reactions of Gd thin films on (111) and (001)Si

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 291-294

  Chen, J C ^a   Shen, G H ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; GADOLINIUM; NUCLEATION; PHASE TRANSITIONS; SEMICONDUCTING SILICON; STACKING FAULTS; SURFACE PHENOMENA;

AMORPHOUS INTERLAYER; INTERFACIAL REACTIONS; SILICIDE; VACANCY ORDERING;

INTERFACES (MATERIALS);

EID: 0032653187     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00639-4     Document Type: Article

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