A new antifuse cell with programmable contact for advance CMOS logic circuits

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 522-524

  Chen, Maybe ^a   Huang, Chian En ^a   Tseng, Yuan Heng ^a   King, Ya Chin ^a   Lin, Chrong Jung ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Antifuse; Dielectric breakdown; Gate oxide; Nonvolatile memories (NVMs); One time programmable (OTP); Oxide breakdown; Resist protection oxide (RPO)

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; NONVOLATILE STORAGE;

GATE OXIDE; NONVOLATILE MEMORIES; ONE-TIME PROGRAMMABLE; OXIDE BREAKDOWN; PROGRAMMABLE CONTACT ANTIFUSE; RESIST-PROTECTION OXIDE;

LOGIC CIRCUITS;

EID: 43549113139     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.920754     Document Type: Article

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