A new CMOS logic anti-fuse cell with programmable contact

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Volumn , Issue , 2007, Pages 48-51

  Huang, Chia En ^a   Chen, Hsin Ming ^b   Chen, May Be ^a   King, Ya Chin ^a   Lin, Chrong Jung ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b EMEMORY TECHNOLOGY INC   (Taiwan)

Author keywords

Anti fuse; Contact; Oxide breakdown; RPO

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONTACTS (FLUID MECHANICS); SEMICONDUCTOR STORAGE;

ANTI FUSE; CMOS PROCESSS; HIGHLY STABLES; LOGIC PROCESS; OXIDE BREAKDOWN; PROGRAMMABLE LOGIC; READ OPERATION; READING PERFORMANCE;

COMPUTER CIRCUITS;

EID: 43549095330     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nvsmw.2007.4290576     Document Type: Conference Paper

References (9)

1. H. Cha, et al., IEEE J. Solid-State Circuits, p. 2115, 2006.
2. R. Barsatan, et al., IEEE ISCAS, pp. 975, 2006.
3. S. B. Herner, et al., IEEE Elec. Dev. Lett., pp. 271-273, 2004.
4. C. de Graaf, et al. IEDM Tech. Dig., pp. 189-192, 1996.
5. J. Kim, et al., in Symp. VLSI Circuits Dig. Tec. p. 239, 2003
6. W. T. Li, et al., IEEE Electron Device Lett., pp. 295-297, 2000.
7. P. Candeller, et al., IEEE IRPS, p. 169, 2000.
8. J. Teichmann, et al., IEEE ESSDREC, p. 433, 2003.
9. P. Kim, et al., IEEE SICE, pp. 2980, 2003.