A 0.26-μ2 U-shaped nitride-based programming cell on pure 90-nm CMOS technology

IEEE Electron Device Letters

Volumn 28, Issue 9, 2007, Pages 837-839

  Lai, Han Chao ^a   Cheng, Kai Yuan ^a   King, Ya Chin ^a   Lin, Chrong Jung ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

CMOS one time programming (OTP); Logic nonvolatile memory (NVM); Nitride storage node; Source side injection (SSI)

Indexed keywords

ADVANCED CMOS; CELL SIZES; CMOS LOGIC PROCESS; CMOS ONE TIME PROGRAMMING (OTP); CMOS TECHNOLOGIES; COMPATIBLE PROCESS; GATE OXIDES; LOGIC NONVOLATILE MEMORY (NVM); LOGIC PROCESS; NITRIDE STORAGE NODE; PROGRAMMABLE LOGIC; READ OPERATIONS; SOURCE-SIDE INJECTION (SSI); U-SHAPED;

CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; LOGIC CIRCUITS; NITRIDES; WINDOWS;

NONVOLATILE STORAGE;

EID: 43549114158     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.903953     Document Type: Article

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