Pure CMOS one-time programmable memory using gate-ox anti-fuse

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2004, Pages 469-472

  Ito, Hiroshi ^a   Namekawa, Toshimasa ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; LOGIC GATES; MOS DEVICES; NONVOLATILE STORAGE; POLYSILICON; REDUNDANCY; THERMAL EFFECTS; TRANSISTORS;

ANTI-FUSE PROGRAMMING; DIELECTRIC BREAKDOWN; ONE-TIME PROGRAMMABLE MEMORY; POLYSILICON INTERCONNECTS;

CMOS INTEGRATED CIRCUITS;

EID: 17044409134     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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