45nm gateless anti-fuse cell with CMOS fully compatible process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 95-98

  Tsai, Yi Hung ^a   Chen, Hsin Ming ^b   Chiu, Hsin Yi ^a   Shih, Hung Sheng ^a   Lai, Han Chao ^a   King, Ya Chin ^a   Chrong, Jung Lin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b EMEMORY TECHNOLOGY INC   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CYTOLOGY; ELECTRON DEVICES; LOGIC DEVICES; NITRIDES;

90NM NODE; CMOS-COMPATIBLE; GATE OXIDES; LOGIC PROCESSES; PROGRAM PERFORMANCE; PROGRAMMABLE LOGICS;

CELLS;

EID: 50249164884     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418872     Document Type: Conference Paper

References (7)

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7. C.E. Huang, H.M. Chen, Y.C. King, and C.J. Lin, "A new CMOS logic anti-fuse cell with programmable contact," IEEE NVSMW 22nd, 2007.