A one time programming cell using more than two resistance levels of a PolyFuse

Proceedings of the Custom Integrated Circuits Conference

Volumn 2005, Issue , 2005, Pages 263-266

  Fellner, Johannes ^a  

^a AMS AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER PROGRAMMING; DATA STORAGE EQUIPMENT;

ONE TIME PROGRAMMING CELL; PROGRAMMED POLYFUSE;

CELLULAR ARRAYS;

EID: 33847170600     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2005.1568657     Document Type: Conference Paper

References (4)

1. M. Alavi, M. Bohr, J.Hicks, "A PROM Element based on Salicide Agglomeration of PolyFuses in a CMOS Logic Process" IEEE International Electron Device Meeting, December 1997.
2. J. Fellner, P. Boesmueller, H. Reiter, "Lifetime Study for a PolyFuse in a 0.35μm Polycide Process", IEEE International Reliability Physics Symposium, April 2005.
3. J.Simader, "Entwicklung von PolyFuses als PROM Element für den CSD (0,35 μm CMOS) Prozess" Diploma Thesis - Technical University Graz, September 2002.
4. Research Institute for Electron Microscopy and Fine Structure Research (FELMI), TU-Graz.