Antifuse EPROM circuitry scheme for field-programmable repair in DRAM

IEEE Journal of Solid-State Circuits

Volumn 35, Issue 10, 2000, Pages 1408-1414

  Wee, Jae Kyung ^a   Yang, Woodward ^b   Ryou, Eui Kyu ^a   Choi, Joo Sun ^a   Ahn, Seung Han ^a   Chung, Jin Yong ^a   Kim, Sea Chung ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; MOSFET DEVICES; PROM; SCANNING ELECTRON MICROSCOPY;

ANTIFUSE CIRCUITRY; DIELECTRIC BREAKDOWN; HIGH VOLTAGE GENERATOR; INTERLEVEL POLYSILICON; OXIDE NITRIDE OXIDE DIELECTRIC; SYNCHRONOUS DYNAMIC RANDOM ACCESS STORAGE;

FIELD PROGRAMMABLE GATE ARRAYS;

EID: 0034297168     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.871316     Document Type: Article

References (10)

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