Evaluation of SiO2 antifuse in a 3D-OTP memory

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 3, 2004, Pages 416-421

  Li, Feng ^a   Yang, Xiaoyu ^a   Meeks, Albert T ^a   Shearer, James T ^a   Le, Kim Yen ^a  

^a Matrix Semiconductor   (United States)

Author keywords

3d memory; Antifuse; Archival media; Nonvolatile memory; Oxide breakdown

Indexed keywords

CMOS INTEGRATED CIRCUITS; MIM DEVICES; NONVOLATILE STORAGE; POLYSILICON; PROM; SEMICONDUCTOR DEVICES;

3D MEMORY; ANTIFUSES; ARCHIVAL MEDIA; OXIDE BREAKDOWN; OXIDE-NITRIDE-OXIDE (ONO);

SILICA;

EID: 11144243668     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.837118     Document Type: Article

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