Model prediction of radical composition in C4F8 plasmas and correlation with measured etch characteristics of silicon dioxide

Plasma Sources Science and Technology

Volumn 5, Issue 2, 1996, Pages 200-209

  Kazumi, Hideyuki ^a   Hamasaki, Ryoji ^a   Tago, Kazutami ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DISSOCIATION; FLUOROCARBONS; MATHEMATICAL MODELS; MICROWAVES; PLASMA DENSITY; PLASMA ETCHING; PLASMA FLOW; REACTION KINETICS; SEMICONDUCTOR PLASMAS; SILICA; SILICON NITRIDE;

ELECTRON TEMPERATURE; MOLECULAR ORBITAL METHOD; SELECTIVE ETCHING;

PLASMA SOURCES;

EID: 0030134325     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/5/2/013     Document Type: Article

References (10)

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3. Coburn J W 1979 J. Appl. Phys. 50 5210
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8. Kazumi H and Tago K 1995 Japan. J. Appl. Phys. 34 2125
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