Comparison of Cl2/He, Cl2/Ar, and Cl2/Xe plasma chemistries for dry etching of NiFe and NiFeCo

Journal of the Electrochemical Society

Volumn 146, Issue 4, 1999, Pages 1465-1468

  Jung, K B ^a   Cho, H ^a   Hahn, Y B ^a,c   Hays, D C ^a   Lambers, E S ^a   Park, Y D ^a   Feng, T ^a   Childress, J R ^b   Pearton, S J ^a  

^a University of Florida   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; AUGER ELECTRON SPECTROSCOPY; CHLORINE; DESORPTION; HELIUM; MAGNETRON SPUTTERING; NICKEL ALLOYS; STOICHIOMETRY; THIN FILMS; XENON;

INDUCTIVELY COUPLED PLASMA; ION ASSISTED DESORPTION;

PLASMA ETCHING;

EID: 0032657431     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391787     Document Type: Article

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