Chemical dry etching of si substrate in a discharge flow using Ar/CF4 gas mixtures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 11, 1999, Pages 6470-6475

  Tsuji, Masaharu ^a   Okano, Shinji ^a   Tanaka, Atsushi ^a   Nishimura, Yukio ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

CmFn polymer; CF4; Chemical dry etching; Discharge flow; Microwave discharge; Si

Indexed keywords

ARGON; CHLORINE CONTAINING POLYMERS; DEPOSITION; DRY ETCHING; FLUORINE CONTAINING POLYMERS; FLUOROCARBONS; MICROWAVES;

MICROWAVE DISCHARGES;

SILICON WAFERS;

EID: 0033345688     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6470     Document Type: Article

References (18)

1. Y. Horiikc: Semiconductor Plasma Processing Technology, cd. T. Sugano (SangyoTosho, Tokyo, 1980) p. 120.
2. Glow Discharge Processes: Sputtering and Plasma Etching, cd. B. N. Chapman (Wiley, New York, 1980).
3. Photon anil Plasma Processings, cds. K. Akashi, S. Hattori and 0. Matsumoto (Nikkan Kougyo Shinbunslia, Tokyo, 19S6) p. 211.
4. Y. Horiike and M. Shibagaki: Semiconductor Silicon 1977, eds. H. R. Huff and E.Sirtle (Princeton,1977) EIcctrochcm. Soc. Symp. Vol. 77-2, p. 1071.
5. B. E. E. Kastcnmeicr, P. J. Matsuo, J. J. Bculcns and G. S. Ochrlcin: J. Vac. Sci. & Tcchnol. A 14 (1996) 2802.
6. M. Tsuji and Y. Nishimura: Jpn. J, Appl. Phys. 36 (1997) 6922.
7. M. Tsuji, H. Kouno, Y. Nishimura, H. Obasc and K. Kasalani: J. Chcm. Phys. 95 (1991) 7317.
8. M. Tsuji: Techniques of Chemistry, eds. J. M. Farrar and W. H. Saunders, Jr. (Wiley, New York, 1988) Vol. 20, p. 489.
9. T. Matsuo, N. Kobayashi and Y. Kancko: J. Phys. Soc. Jpn. 50 (1981) 3482.
10. T. Matsuo, N. Kobayashi and Y. Kancko: J. Phys. Soc. Jpn. 51 (1982) 1558.
11. T. D. Nguycn and N. Sadeghi: Chem. Phys. 79 (1983)41.
12. M. Tsuji, M. Tanaka and Y. Nishimura: Chcm. Phys. Lett. 256 (1996) 623.
13. K. Suzuki and K. Kuchitsu: J. Photochcm. 10 (1979) 401.
14. M. Tsuji, T. Funalsu, H. Kouno and Y. Nishimura and H. Obasc: J. Chem. Phys. 96 (1992) 3649.
15. M. Tsuji, K. Kobarai, H. Kouno, H. Obase and Y. Nishimura: J. Chcm. Phys. 94 (1991) 1127.
16. M. Tsuji, M. Nakamura, Y. Nishimura and H. Obase: J. Chcm. Phys. 108(1998)8031.
17. M. Tsuji, M. Nakamura, E. Oda, M. Hisano and Y. Nishimura: Jpn. J. Appl. Phys. 37 (1998) , 5775.
18. T. Maruyama, N. Fujiwara, K. Siozawa and M. Yoneda: Jpn. J. Appl. Phys. 35(1996)2463.