In situ Fourier transform infrared measurements of Si surface and bulk plasmas in Cl2/O2 and HBr/O2 electron cyclotron resonance plasma etching: Influence of oxygen on reaction products

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2421-2426

  Nishikawa, Kazuyasu ^a   Oomori, Tatsuo ^a   Ono, Kouichi ^a   Tuda, Mutumi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

ECR plasma etching; FTIR absorption spectroscopy; IR RAS; Reaction products; Si etching; Silicon bromides SiBrx; Silicon oxides SiOy; Silicon oxybromides

Indexed keywords

CHLORINE COMPOUNDS; ELECTRON CYCLOTRON RESONANCE; ELECTROSTATICS; EMISSION SPECTROSCOPY; FLOW OF FLUIDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXIDES; PLASMAS; SILICA; SILICON; SILICON COMPOUNDS; SURFACES;

BULK PLASMAS; CHLORIDE OXIDE ETCHING; ELECTROSTATIC PROBE MEASUREMENTS; EMISSION INTENSITY; HYDRON BROMIDE OXIDE ETCHING; SILICON BROMIDES; SILICON ETCHING; TOTAL GAS FLOW RATE;

PLASMA ETCHING;

EID: 0030124602     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2421     Document Type: Article

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