Anhydrous HF etch reduces processing steps for DRAM capacitors

Solid State Technology

Volumn 41, Issue 5, 1998, Pages 71-76

  Chang, S L Luke ^a,b   Hanestad, Ron ^a   Butterbaugh, Jeffery W ^a  

^a FSI International   (United States)

^b Surface Conditioning Division   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ETCHING; HYDROFLUORIC ACID; PROCESS CONTROL; SEMICONDUCTOR DOPING; SENSORY PERCEPTION;

ETCH SELECTIVITY; VAPOR PHASE ETCHING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032058225     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (7)

1. D.E. Kotecki, "High-k Dielectric Materials for DRAM Capacitors," Semiconductor International, p. 109, Nov. 1996.
2. H. Watanabe, et al., "A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256 Mbit DRAMs," Technical Digest IEDM, IEEE, pp. 259-262, Dec. 13, 1992.
3. J.R. Mehta, T. Rogers, S. Kikuchi, "Selective Etching for Making Cylindrical Capacitors Using Anhydrous HF Vapor Phase Chemistry," Proc of the 4th Intl Symp on Cleaning Technology in Semiconductor Manufacturing IV, The Electrical Chemical Society, pp. 194-200, 1996.
4. B. Blackwood, R. Biggerstaff, L.D. Clements, R. Cleavelin, U.S. Patent No. 4,749,440.
5. R. Bersin, R.F. Reichelderfer, "The DryOx Process for Etching Silicon Dioxide," Solid State Technology, Vol. 20, No. 4, pp. 78-80, 1977.
6. VLSI Technology, S.M. Sze, ed., McGraw-Hill, pp. 115-119, 1983.
7. M. Wong, M-M. Moslehi, R.A. Bowling, "Wafer Temperature Dependence of the Vapor-Phase HF Oxide Etch," Journal of the Electrochemical Society, Vol. 140, No. 1, pp. 205-208, 1993.