Characterization of Si(100) surface after high density HBr/Cl2/O2 plasma etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 1, 2000, Pages 14-19

  Low, Chun Hui ^a,b   Chin, Wee Shong ^a   Tan, Kuang Lee ^a   Loh, Foo Chan ^a   Zhou, Meisheng ^b   Zhong, Qing Hua ^b   Chan, Lap Hung ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MASKS; MATHEMATICAL MODELS; PASSIVATION; PLASMA ETCHING; SEMICONDUCTING FILMS; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

CLUSTER MODELLING; DILUTE HF TREATMENT; FILM DEPOSITION; MICROMASK; PASSIVATION FILM; SILICON OXIDES; SILICON OXYBROMIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033889042     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.39.14     Document Type: Article

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