Etching High Aspect Ratio Silicon Trenches

Journal of the Electrochemical Society

Volumn 150, Issue 10, 2003, Pages

  Panda, Siddhartha ^a   Ranade, Rajiv ^a   Mathad, G Swami ^a,b  

^a IBM MICROELECTRONICS   (United States)

^b Semiconductor Technology Consulting   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CAPACITANCE; DYNAMIC RANDOM ACCESS STORAGE; ETCHING;

SILICON TRENCHES;

SILICON;

EID: 0142021036     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1603254     Document Type: Article

References (8)

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