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Solid State Communications

Volumn 132, Issue 2, 2004, Pages 135-140

Effect of elastic anisotropy on the strain fields and band edges in stacked InAs/GaAs quantum dot nanostructures

(4) Lee, Woong a Myoung, Jae Min a Yoo, Yo Han b Shin, Hyunho c

a Yonsei University (South Korea)

b Agency for Defence Development (South Korea)

c Seoul National University (South Korea)

Author keywords

A. Confinement potential; A. Quantum dot; D. Anisotropy; D. Strain

Indexed keywords

CONDUCTION BANDS; CONFINEMENT POTENTIAL; STAIN DISTRIBUTION;

ANISOTROPY; FINITE ELEMENT METHOD; GREEN'S FUNCTION; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4344620166 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2004.05.010 Document Type: Article

Times cited : (9)

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