Strains in InAs quantum dots embedded in GaAs: A finite element study

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 7 A, 2000, Pages

  Muralidharan, Govindarajan ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; STRAIN;

INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034226483     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l658     Document Type: Article

References (12)