Effects of lateral quantum dot pitch on the formation of vertically aligned InAs site-controlled quantum dots

Journal of Applied Physics

Volumn 93, Issue 2, 2003, Pages 1190-1194

  Yang, Tao ^a,b   Kohmoto, Shigeru ^a   Nakamura, Hitoshi ^a   Asakawa, Kiyoshi ^a  

^a WASEDA UNIVERSITY   (Japan)

^b NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; PROBABILITY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS;

SITE-CONTROLLED QUANTUM DOTS (SCQD);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037439311     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1530728     Document Type: Article

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