Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1253-1258

  Yoon, Doo Hyeb ^a   Lee, Kyu Seok ^a   Yoo, Ji Beom ^b   Seong, Tae Yeon ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

AFM; InGaN; LT GaN; MOCVD; SIMS; TEM; Threading dislocation

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

THREADING DISLOCATIONS;

HETEROJUNCTIONS;

EID: 0036509169     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1253     Document Type: Article

References (12)