Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

Journal of Electronic Materials

Volumn 21, Issue 2, 1992, Pages 157-163

  Matsuoka, T ^a   Yoshimoto, N ^a   Sasaki, T ^a   Katsui, A ^a  

^a NTT CORPORATION   (Japan)

Author keywords

InGaAlN; InGaN; MOVPE

Indexed keywords

CRYSTALS--STRUCTURE; ORGANOMETALLICS; PHOTOLUMINESCENCE; X-RAYS--DIFFRACTION;

VAPOR PHASE EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0026821780     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02655831     Document Type: Article

References (11)

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Properties of Ga1-xInxN Films Prepared by MOVPE
3. Polarity of ZnO Crystal (II) Chemical Etching Behavior